Abstract
The fabrication, the electrical characterization and the two dimensional numerical simulation of the hydrogenated amorphous silicon Static Induction Transistor (a-Si:H SIT) are reported. The I-V measurements show an ON-OFF current ratio of 300 and a pinch off voltage of −9.5 volts for V ds = 6V. Numerical simulation suggests the presence of a high density of states layer at the a-Si:H/a-Si:H interface.
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