Abstract
Several prospective applications of ion implantation to preparation of amorphous materials and to formation of device component elements for amorphous silicon solar cells are studied. In principle ion implantation, in conjunction with adequate annealing techniques when required, can allow very broad adjustments to be made to composition and microphysical structure of a silicon film adequately thick to meet requirements of an amorphous cell. If implantation can be fully exploited by such an approach, starting material for an amorphous cell could be a silicon film which would not necessarily be initially amorphous or include required dopants and compositional constituents such as hydrogen. A series of selected implantation procedures could be used to accomplish the following: doping, hydrogenation, amorphization, and special impurity incorporation. In order to evaluate the validity and merit of the candidate applications of implantation, the program performed included the following: (1) examination of implantation limits and requirements, (2) development of adequate experimental implantation capabilities and procedures, (3) development of a material test structure and of an amorphous solar cell test structure, (4) preliminary survey of implantation effect upon silicon film material and device structures, and (5) preparation of an amorphous silicon cell. Results are presented and discussed. (WHK)
Submitted Version
Published Version
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