Abstract
A hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell with a two-layer back electrode is proposed. The new type of back electrode consists of a conventional Al layer and an amorphous silicide layer. The properties of amorphous Cr-silicide film and thermal stability of a-Si:H p-i-n solar cells with a two-layer back electrode are studied. The experimental results show that an amorphous Cr-silicide layer can prevent the thermal diffusion of Al from going into a-Si:H, and thus can improve the thermal stability of the a-Si:H solar cell.
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