Abstract
This paper reviews amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability. Also, issues pertinent to thin film transistor stability are presented along with optimization of materials and processing conditions for reduced VT-shift and leakage current. Selected results are shown for X-ray and optical detectors, thin film transistors, and integrated X-ray pixel structures. Extension of the current fabrication processes to low (∼120°C) temperature, enabling fabrication of thin film electronics on flexible (polymer) substrates, are also discussed along with preliminary results.
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