Abstract
The solid state reactions between Cr and undoped aSi:H and aSi have been investigated to reveal the kinetics of silicide formation. For the Cr/PECVD aSi:H system, an amorphous Cr silicide (alloy) forms at the interface even at room temperature (RT). The compositional ratio of Cr to Si in the a-silicide layer formed at RT was found to be about 5%. On the other hand, in a Cr/sputtered aSi system at RT an interfacial amorphous layer also exists, but its thickness is negligible. The kinetics of the low temperature interaction are discussed.
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