Abstract
This chapter presents an analysis of the electronic properties of amorphous semiconductor-electrolyte junction for a-Nb2O5 anodic films grown in NaOH solution with different thickness (20 - 250 nm). A modelling of electronic density of state (DOS) is carried out by fitting EIS spectra, at different potentials and in a range of frequencies and differential admittance (DA) data of a-Nb2O5/El interface. The fitting of EIS and DA curves was performed by using the theory of amorphous semiconductor Schottky barrier and a non-homogeneous DOS distribution. The study shows that by using the theory of a-SC Schottky barrier, it is possible to explain the admittance behavior of a-Nb2O5 oxide film-electrolyte interface in a large range of frequencies and electrode potential. By fitting the admittance curves in a large range of electrode potential values, it has been possible to derive some information on the spatial distribution of DOS in the bulk of the passive film.
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