Abstract
Barrier properties of 10 nm thick Ru and amorphous films as seedless copper diffusion barriers have been investigated. Thermal stability of the barriers was evaluated after annealing at various temperatures. X-ray diffraction (XRD) analyses and sheet resistance measurements suggested that the barrier was thermally stable up to against Cu diffusion, which improved about over the Ru film. XRD studies and electron diffraction patterns of the film showed that it maintained an amorphous-like microstructure after 30 min annealing at . This film started to recrystallize at about and developed to a film with Ru and grains after a anneal. The leakage current of the postannealed Cu/RuW/porous SiOCH/Si stacked structure provided nearly 2 orders of magnitude superior than that of the Ru sample. The amorphous film is an alternative candidate for the Cu direct platable seedless barrier in the advanced copper metallization process.
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