Abstract
PECVD and PEALD of ruthenium films using RuEtcp2 as a precursor and N2/H2/Ar plasma as a reducing agent were characterized. A self-adjusting process to overcome the previously reported inhibition of Ru PEALD on TaN substrates was investigated. Ellipsometric modelling of Ru films was demonstrated providing information on both film thickness and estimated Ru content. The physical properties of PECVD/PEALD Ru films were compared to characteristics of sputtered Ru films within the categories resistivity, impurites, crystal structure, conformity and Cu plating. As a result, ToFSIMS, ERDA and 3D atomprobe revealed the presence of carbon impurities in PECVD and PEALD Ru films, dependent on deposition temperature and plasma power. Nevertheless, highly conductive Ru-C films were produced via PECVD and PEALD achieving resistivities equal to PVD Ru. For all types of Ru films, the size effect played a significant role at thicknesses below 10 nm; Cu plating and crystallization behaviour appeared similar. Direct Cu fill potential of different Ru films was discussed for damascene structures and through silicon vias.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
