Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Abstract

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150nm-thick SiO2/50nm-thick HfO2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO2/HfO2 showed a higher capacitance of 35nF/cm2 and a lower leakage current density of 4.6nA/cm2 than 200nm-thick SiO2. The obtained saturation mobility (μsat), threshold voltage (Vth), and subthreshold swing (S) of the fabricated TFTs were 18.8cm2V−1s−1, 0.88V, and 0.48V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.