Abstract
Bottom-gate thin film transistors (TFTs) with indium titanium zinc oxide (InTiZnO) active layer were prepared by radio-frequency (RF) sputtering system at room temperature. Alumina was introduced as the gate dielectric material to acquire better electrical properties by improving the quality of interface between dielectric and channel layer. At zero gate bias and under 290-nm light illumination, the TFTs exhibited a photoresponsivity of 2.3 A/W. The photo-to-dark current ratio was almost up to 105 and the UV-to-visible rejection ratio was 1817. These results revealed that InTiZnO, as a novel UV-sensitive material, had potential for practical optoelectronic applications with high performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
