Abstract
The recombination junction between two cells in amorphous-silicon-based tandem devices can be improved by inserting doped nanocrystalline silicon layers, which have higher conductivities, between doped amorphous silicon layers. However, long deposition times (∼15 min) are required to nucleate and grow these thin nanocrystalline silicon layers on an amorphous-silicon layer. We show that by increasing the phosphorus doping in the amorphous silicon n layer, and replacing the nanocrystalline silicon layers with amorphous germanium layers, a similar performance is obtained with a shorter (∼1 min) deposition time.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
