Abstract
An amorphous Ga–Sn–O (α-GTO) thin-film crosspoint-type spike-timing-dependent- plasticity (STDP) device has been developed. The α-GTO thin-film consists of omnipresent elements, can be easily deposited, and is therefore inexpensive. The STDP is a promising learning rule for neuromorphic systems. In this study, first, an α-GTO thin-film crosspoint-type STDP device is fabricated. Next, simple spiking pulses are applied as pre- and post-synapse signals. Finally, a symmetric STDP characteristic is observed, which is due to whether the electric field becomes high during the pulse application. From the potential feasibilities, we would like you to investigate and apply it as a basic technology for AI electronics.
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