Amorphous-crystalline silicon heterojunction: Theoretical studies of the dark current and spectral response

Abstract

All the terms contributing to the dark current for an n-amorphous/ p-crystalline silicon heterojunction have been evaluated. The abrupt heterojunction model with the presence of interface states has been adopted and flat quasi-Fermi levels have been assumed across both depletion regions. The gap density of states in amorphous silicon has been approximated by a V-distribution. The dominant current mechanisms at forward and reverse biases have been determined and the zero-bias spectral response has been calculated.