Abstract
Understanding the phase transition processes in chalcogenide materials is of key importance for the development, optimization, and further scaling of phase-change memories (PCM). In particular, the transition from the amorphous to crystalline phase plays a crucial role in both programming and retention. Depending on the chosen material, either nucleation or growth processes are dominating this crystallization. In the first part of this article, different theoretical models for nucleation and growth are compared, and this for two typical phase-change materials. The second part of the article shows how finite element simulations can provide the direct link between these crystallization theories and operation and retention characteristics of a real PCM cell.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
