Abstract
The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.
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