Abstract
The process of amorphization of Si(0 0 1) by ultra low energy (0.5 keV B + and 5 keV Si +) ion implantation is investigated using high-resolution RBS/channeling with a depth resolution better than 1 nm. In contrast to observations at higher implantation energies, amorphization by the ultra low energy ion implantation appears to proceed from the SiO 2/c-Si interface. The threshold dose for amorphization is determined to be ∼1 × 10 15 cm −2 for 0.5 keV B + and ∼1.5 × 10 14 cm −2 for 5 keV Si +. Comparison of the experimental results with TRIM simulations suggests that the SiO 2/c-Si interface behaves as a nucleation site for amorphization.
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