Abstract
Amorphization of 6H-SiC with 200 keV Ge+ ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ions at 480 °C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis. Experimental results on amorphous layer thicknesses have been compared with trim calculations in association with the critical energy density model. Density changes during amorphization have been observed by step height measurements. Particular attention has been directed to the crystal quality and a possible polytype transformation during the IBIEC regrowth. The IBIEC process consists of two stages and results in a multilayer structure. In the initial phase an epitaxial growth of 6H-SiC has been obtained. With increasing IBIEC dose the epitaxial growth changes to columnar growth and is stopped by polycrystallization of 3C polytype in the near-surface region.
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