Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Abstract

We study the ammonia source molecular beam epitaxy growth of polycrystalline GaN on quartz glass substrates, and fabricate p-n diodes. Using an ammonia source, the grain size of polycrystalline GaN becomes larger than that of the ECR source growth and PL intensity is much stronger. Undoped polycrystalline GaN shows high resistivty. The n-type and p-type polycrystalline GaN layers are obtained by Si and Mg dopants, respectively. Carrier concentrations obtained are 2.2 × 10 -17 to 8.8 x 10 -17 cm -3 for n-type layers and 7.1 x 10 -17 cm -3 for p-type layers. We fabricate polycrystalline GaN p-n junction and confirm the rectifying characteristics.