Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors

Abstract

The alternative group V sources trisdimethylamino-arsine (TDMAAs) and trisdimethylamino-phosphine (TDMAP) have been used as substitutes for the highly toxic group V hydrides AsH3 and PH3 for the growth of GaAs, (AlGa)As and InP epitaxial layers by low-pressure metalorganic vapour phase epitaxy (MOVPE). The properties of the layers have been investigated by means of structural (X-ray diffraction), electrical (Hall) and optical (luminescence) methods. The epitaxial layer quality as a function of growth parameters is presented and discussed. GaAs and InP epitaxial layers exhibit narrow X-ray diffraction linewidths (10″ FWHM). Residual n-type carrier concentrations down to 3 × 1015and5 × 1015 cm−3 for GaAs and InP, respectively, with mobilities up to 4300 and 18000 cm2/V·s at 77 K are observed. The main acceptor impurity in GaAs and InP layers is carbon, as can be concluded from luminescence measurements. For Al-containing layers, a clear deterioration of the layer quality is observed, caused by the incorporation of nitrogen into the layers, as established by SIMS and X-ray diffraction analysis.