Abstract
Abstract We have designed and investigated green InGaN-based light-emitting diodes numerically. We have proposed an efficient device structure with improved carrier transport as well as distribution of holes in the active region. In our proposed structure, we employ a variable active region to improve the device performance. The variable active region comprises of quantum wells with increasing thickness and quantum barriers with decreasing thickness. Both quantum wells and quantum barriers are varied from n-side to p-side of the device. The transport and distribution of holes have significantly improved in our proposed structure exhibiting excellent performance in comparison with other structures.
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