Ambipolar permeable metal-base transistor based on NPB/C 60 heterojunction

Abstract

In this paper, we report the fabrication of permeable metal-base organic transistors based on N, N′-diphenyl- N, N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (NPB)/C 60 heterojunction as both emitter and collector. By applying different polarities of voltage bias to the collector and the base, and input current to the emitter, the ambipolar behavior can be observed. The device demonstrates excellent common-base characteristics both in P-type and N-type modes with common-base current gains of 0.998 and 0.999, respectively.