Abstract
Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te) have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA−VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.
Highlights
Group IIIA VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te) have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties
We demonstrated that metal and indium selenide (InSe) junctions can lead to carrier behaviors in few-layered InSe FETs
These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions
Summary
We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. Some research groups have used separate gates at the drain and source sides to study the use of 2-D materials in optoelectronics applications.[3] This dual-gate structure enables more efficient hole and electron injection in Tungsten Diselenide (WSe2) FETs.[3] WSe2 bulk materials, which have an indirect bandgap, become direct bandgap semiconductors when being reduced to a single layer,[4,5] indicating that their energy bandgaps are very sensitive to the layer thickness.
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