Abstract
Hydrogen-induced changes in the characteristics of Pt/GaN rectifiers fabricated on bulk GaN were studied using current–voltage (I–V), capacitance–voltage (C–V), and impedance spectroscopy measurements. The results were similar to those for Pt/GaN rectifiers fabricated on sapphire substrates [Y. Irokawa, Jpn. J. Appl. Phys. 59, 120901 (2020)]. That is, an ambient H2 atmosphere reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region, suggesting that the quality of the GaN layers was not the origin of the observed H2-induced changes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
