Abstract
We have studied the ambient effects on the low-temperature diffusion of Cr and Si in thin Pt films. The surface-potential model proposed earlier predicts that, contrary to the case in gold, oxygen should suppress the diffusion of Cr and Si in Pt. We have observed a reduced out-diffusion of Cr and a reduced rate of Pt2Si formation in the prseence of O2. The technological significance of this effect is also discussed.
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