Abstract
Dimethylethylamine alane (DMEAA) has been used as an Al precursor for the growth of AlGaAs alloys and AlGaAs/GaAs quantum wells by metalorganic molecular beam epitaxy (MOMBE). It is shown that DMEAA is a very convenient source in terms of in situ calibration of growth rates and alloy composition by reflection high-energy electron diffraction. As indicated by secondary ion mass spectroscopy, low residual O and C impurity content is obtained by using this source. GaAs quantum well structures have been characterized by photoluminescence spectroscopy and compared to equivalent structures grown by standard solid-source molecular beam epitaxy. They are also compared with the results recently reported in the literature for analogous structures grown by MOMBE using alternate aluminum sources.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
