Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100)

Abstract

The fabrication and characterization of an aluminum Schottky barrier on an arsenic capped and heat cleaned GaAs(100) surface is described. The GaAs surface was prepared by molecular beam epitaxy (MBE), and covered with an arsenic cap for protection during transfer through air. The arsenic cap was sublimed by heating, and its removal was monitored by photoemission spectroscopy utilizing synchrotron radiation. After the formation of an aluminum Schottky barrier on this surface, the interfacial position of the Fermi level was measured by photoemission spectroscopy, and the barrier height was measured by I–V and C–V techniques.