Abstract
Etch rates of pure Al films were measured using BCl3–Cl2, SiCl4–Cl2, and He–SiCl4–Cl2 gas mixtures in a parallel plate reactor. Reactant loading was avoided by the use of 1-cm2 etch specimens. Experiments were designed to decouple the affects of Cl2 impingement and ion bombardment upon the Al etch rate. Under conditions of constant ion bombardment, the Al etch rate increased linearly with Cl2 partial pressure. Variations in the slope of Al etch rate versus Cl2 partial pressure were attributed to the presence of B or Si etch residues. The concentrations of these residues were controlled by the energies of ions incident upon the etched surfaces.
Published Version
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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