Abstract
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.
Highlights
III-nitrides including aluminum nitride (AlN) are attractive materials for high-power electronics, especially for high electron mobility transistors (HEMTs)
III-N layers can be grown on Si substrates by metal-organic chemical vapor deposition (MOCVD) [6] or molecular-beam epitaxy (MBE)
One of the possible alternatives for thick buffer layers is use of thin AlN layer grown with plasma-enhanced atomic layer deposition (PEALD) [20]
Summary
III-nitrides including aluminum nitride (AlN) are attractive materials for high-power electronics, especially for high electron mobility transistors (HEMTs). The use of different step graded AlGaN and AlN buffer layers have been widely studied [12,13,14,15,16,17], the nucleation of the AlN layer on Si substrate is not well understood [18]. One of the possible alternatives for thick buffer layers is use of thin AlN layer grown with plasma-enhanced atomic layer deposition (PEALD) [20]. Materials 2019, 12, 406 layer deposition (ALD) produces amorphous AlN film [21], the recently introduced in situ atomic layer annealing (ALA) [22] results in high-quality, hypothetically single-crystalline, AlN growth. PEALD enables fabrication of low-cost templates with high quality AlN transition layer for following epitaxial steps of the device fabrication process. The effect of Si, Si substrates, as well as plasma treatment time and power on film growth are investigated
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