Abstract
A piezoelectric thin film sandwiched between two conductors is the basic structure for high frequency bulk acoustic wave devices. For that purpose, AIN thin films deposited by DC reactive sputtering on various electrode materials were investigated. Highly c-axis oriented thin films as thick as 2.5 μm were grown on various substrates and analyzed. Intrinsic stress values ranging from strong compression to high tension were observed and piezoelectric d33, f coefficients up to 3.9 pm/V were measured. The first fabricated acoustic resonators showed a pronounced resonance peak centered at 2 GHz with a very high Q factor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
