Abstract

Here we report on the fabrication of high-density aligned Si nanotip arrays by chemical vapor deposition followed by dry oxidation and an etching treatment. The dry oxidation investigations indicated that Al-catalyst particles located at the tip of Si nanocones enhance their sharpening. This oxidation behavior is quite different from that of Au-catalyzed Si nanowires and is more favorable to form very sharp Si nanotips. Field emission from an individual Si nanotip showed good field-emission characteristic with a high emission current density of 1×104 A/cm2 because of its sharp tip geography, suggesting their potential application for field emitters. Our work provides an effective approach to fabricate high-density Si nanotip arrays, which overcomes some problems in the conventional fabrication approaches, such as high cost, poor controllability, and complicated process.

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