Aluminum doped zinc oxide wide band-gap n-type optical window for μc-Si superstrate solar cell

Abstract

ZnO:Al thin films were deposited onto glass substrates by RF-magnetron sputtering system. The crystallographic orientation of the films, determined using an X-ray diffractometer (XRD), had a high c-axis orientated crystalline structure along (002) plane. The grains are densely packed as shown in the surface micrograph. The electrical parameters were carried out using Hall Effect measurements. The optical band-gap of the films was estimated based on the thickness and the optical transmittance data and is about 3.78 eV for 50 W RF-power. All parameters obtained were used to simulate a new solar cell structure based on p-type microcrystalline silicon as an absorber and n-ZnO:Al as an optical window. The excellent optical properties of this layer result in a high light trapping yielding to efficiencies about 19%. In order to improve efficiency, we have used a p+-μc-Si thin layer highly doped as a back surface field which minimizes significantly the impact of rear surface recombination velocity on voltage and current leading to a high efficiency of 22%. Optoelectronic parameters were determined using the current density-voltage (J-V) curve by means of an AMPS-1D device simulator.