Aluminum-containing intergranular phases in hot-pressed silicon carbide

Abstract

Using transmission electron microscopy, we studied aluminum-containing intergranular phases and secondary-phase particles at triple-junctions in SiC (hot-pressed with aluminum, boron, and carbon additions). This study of statistical high-resolution electron microscopy of intergranular films indicated that a large fraction of the vitreous intergranular films (in the as-hot-pressed SiC) crystallized during post-annealing in argon above 1000 °C. However, brief heating to 1900 °C indeed re-melted 25% of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain-boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases, together with others reported before, are represented in a quaternary phase diagram for 1900 °C. It is proposed that a SiC-Al2OC liquid domain should be included in this phase diagram.