Abstract
The commonly observed 0.970 eV peak in the low-temperature photoluminescence from electron-irradiated Si is strongly suppressed in Ga-doped material. Another important peak at 0.790 eV is inhibited by Al doping. The present results are in conflict with previous identification of the defect responsible for the 0.790 eV peak. New luminescent bands observed only in samples with Al and Ga doping are reported.
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