Alumina layers deposited by atomic layer deposition with different precursors: Surface photovoltage measurements

Abstract

The electrical and passivation properties of alumina layers deposited by the atomic layer deposition (ALD) technique with trimethylaluminium (TMA) and two different oxidants (ozone and water) and their mixture under different deposition conditions were investigated by using surface photovoltage. In all alumina layers negatively charged defects were observed after the ALD deposition. The density of interface states (Dit) and the density of negative charge (CFix) in as-deposited alumina layers prepared with water was found to be lower in comparison to wafers prepared with O3 or with a mixture of H2O and O3. The minority carrier diffusion length was also larger in wafers prepared with H2O and TMA. By comparing the deposition conditions of different alumina layers we concluded that interstitial oxygen could be responsible for the appearance of the negatively charged defects. After the broadband illumination we also observed a significant increase of CFix in all alumina layers independent of the precursors used for the deposition and only small changes of Dit were detected. O-related defects could also lead to such changes of CFix after the illumination.