Abstract
The misfit dislocations in [001] Ge(Si)/Si islands grown at 700 °C were investigated using transmission electron microscopy. 30° partial misfit dislocations are found both in the island/substrate interface and near the island surface. Since the 30° partial leads the movement of the 60° dissociated misfit dislocation in a (001) compressively strained system such as (001) GeSi/Si, a generation mechanism of misfit dislocations through partial misfit dislocations half loops is proposed.
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