Abstract
Relaxation of misfit stresses in heteroepitaxial systems occurs in many cases via the generation of either perfect or partial misfit dislocations (MDs). The formation of a row of parallel partial MDs has been theoretically described with the help of the simplified energetic approach do not taking into account interactions of MDs with the free surface and pre- existent misfit stresses as well as dislocation-dislocation interactions. However, these interactions are expected to essentially influence on behavior of partial MDs as it is the case with perfect ones. The main aim of this work is to theoretically examine the energetics of partial MDs located in the tips of V-shaped stacking faults with the above interactions being taken into account.
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