Alternating current transport and dielectric relaxation of nanocrystalline graphene oxide

Abstract

Graphene oxide (GO) has been synthesized from natural graphite using modified Hummer’s method and is subjected to sonication for 1 h. X-ray diffraction (XRD) showed that the prepared GO has nanocrystalline structure with particle size of about 5 nm and high-resolution transmission electron microscope showed that it had a layered structure. The nanocrystalline GO powder was pressed as a disk and the alternating current (AC) electrical conductivity, σAC, and dielectric properties have been investigated in the frequency range 50Hz–5 MHz and temperature range 298–523K using parallel plate spectroscopic technique. Analysis of σAC as a function of frequency shows that the relation follows Jonscher’s universal law with frequency exponent decreases with increasing temperature in which the correlated barrier hopping model is applicable to describe the behavior. The dielectric constant and dielectric loss are studied as functions of frequency and temperature. The dielectric modulus formalism is used for describing the relaxation process in which the relaxation time and its activation energy were evaluated.