Abstract
In this paper, we study structures contained thin hydrogenated amorphous silicon (a-Si:H) films deposited on porous silicon multilayers (Distributed Bragg Reflector DBR) formed by electrochemical etching of crystalline silicon (c-Si) wafers. The a-Si:H thin films were deposited by the Direct-current magnetron sputtering technique in a mixture of argon and hydrogen atmosphere. It is shown in our previous work that the Bragg mirrors formed on crystalline silicon play an important role in the light trapping in a-Si:H. The structural features of porous silicon, in terms of porosity, thickness and surface roughness, were determined using spectroscopic ellipsometry. The elaborated structures were analysed by impedance spectroscopy. The fit of data obtained from the impedance spectroscopy allowed us to determine the electrical equivalent circuit. This permits the identification of the electronic behaviour of the structures and allows us to explain the role of their different components, including the interfaces. For this purpose, we have proceeded successively. First, by the characterisation of porous silicon monolayers, afterward structures formed by porous silicon multilayers as DBR and structures of a-Si:H/c-Si and a-Si:H/PSi(DBR)/c-Si are characterised. A negative capacitance was found for the heterojunction with DBR, which was attributed to the existence of defect states at the interfaces between porous and amorphous silicon.
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