Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient

Abstract

A quantitative analysis of the morphology, topography, and electrical characterization of the metal-organic decomposed quaternary GaxCe1-xOyNz passivation layer grown on Si substrate in nitrogen/oxygen/nitrogen ambient at temperatures of 600, 700, 800, and 900 °C was carried out. Incorporation of nitrogen into the passivation layer was more prominent at lower temperatures by either attaching to oxygen vacancies sites or staying as dangling bonds in the passivation layer. The increase of annealing temperature to 800 and 900 °C enhanced the adsorption of oxygen to occupy the oxygen vacancies and hence, limiting the incorporation of nitrogen. As a consequence, formation of SiO2 took place at the interface between GaxCe1-xOyNz and Si substrate, degrading the k value of the passivation layer. The largest k value was perceived by the passivation layer annealed at 700 °C, accompanied with the acquisition of the highest positive effective oxide charges and considerably low interface trap densities and low trap density as well as large band gap, which led to an improvement in the current density-electric field (J-E) performance.