Abstract

Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through‐the‐silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128–2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300–2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measured total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.

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