Abstract
AlSb/InAs HEMTs have been fabricated using Si-doping in a very thin (9 A) InAs layer located in the upper AlSb barrier. Quantum Hall measurements show that there is no parallel channel. Devices with a 0.5 µm gate length exhibit a drain current density of > 1 A/mm and an fTLg product of 30 GHzµm at VDS = 0.4 V after correction for the gate bonding pad capacitance.
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