Abstract
Alpha-sexithienyl (α-6T) was synthesized and deposited as thin films on platinized glass slides by vacuum evaporation. small dots of Ag and Au were then added upon the organic layer, and the thus formed diodes were characterized by current-voltage ( j-itV) and capacitance-voltage ( C-V) measurements. As-deposited α-6T is a p-type semiconductor, as shown by the rectifying barrier formed with Ag, and the quasi-ohmic contact given by Au. After heating at 150°C in air, it turns to n-type, as evidenced by the formation of rectifying diodes with both Ag and Au, and the reversal of the direction of rectification. Determination of the carrier mobility gives values in the range of 10 −2cm 2V −1s −1, more than one hundred times higher than those reported for the corresponding polymer, undoped polythiophene (PT).
Published Version
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