Abstract
The process of plasma-enhanced chemical vapour deposition of AlN thin films on oxidized silicon substrates is characterized by using NH 3 and Al(CH 3) 3 as reactants and argon as a carrier gas. Mirror-smooth thin films of AlN are deposited under a wide variety of growth conditions. Growth characteristics are determined as functions of process parameters including substrate temperature, plasma power, reaction pressure, reactant ratio and flow rate reactants. The refractive indices of the films vary between 1.8 and 2.0 depending on the process conditions, which is consistent with the change in the film density. X-ray diffraction and transmission electron micrograph analyses indicate that the deposits prepared below 200°C are amorphous while growth above 400°C produces polycrystalline material.
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