Abstract
AbstractAluminum nitride (AlN) is a true bulk‐grown native substrate for III‐nitrides. The crystals are grown by seeded physical vapor transport (PVT) using AlN seeds. AlN has high thermal conductivity (comparable to, and perhaps higher than SiC), high bulk resistivity (>1x1011 Ohm cm), high bulk‐breakdown field (7‐8 MV/cm), the highest surface acoustic wave (SAW) velocity and since it has the smallest lattice constant of the III‐nitrides all AlInGaN compositions grown on AlN are in compression, thus making it easier to grow crack‐free epitaxy. Additionally, AlN is transparent down to nearly 200 nm, making it attractive for deep UV LED structures. AlN has excellent cleavage planes making it suitable for edge‐emitting lasers and low cost manufacturing. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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