AlN-based piezoelectric micromachined ultrasonic transducer for photoacoustic imaging

Abstract

We report on the fabrication of a piezoelectric micromachined ultrasonic transducer (pMUT) and its application to photoacoustic imaging. With c-axis orientation, AlN was grown on a 300 nm-thick SiO2 film and a 200 nm-thick bottom electrode at room temperature. The device consists of SiO2, bottom electrode, AlN films, upper electrode, and polyimide protective layer. An area ratio of 0.45 was used between the upper electrode and the vibration area of the pMUT to provide an optimal sensitivity of transducer. Its resonant frequency was measured to be 2.885 MHz, and the coupling coefficient in the range of 2.38%–3.71%. The fabricated pMUT was integrated with a photoacoustic imaging system and photoacoustic image of a phantom was obtained. The resolution of the system was measured to be about 240 μm.