Abstract
Abstract Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.
Highlights
Photonic chip integration is an indispensable technology for information processing and communication
We propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2
Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications
Summary
Photonic chip integration is an indispensable technology for information processing and communication. The all-optical modulators can completely convert and modulate signals in the optical domain which are essential for on-chip interconnection, short-distance communications [4, 5] To implement their use in such applications, smaller-sized all-optical modulators are required, while sufficient modulation depth should be maintained. Due to the low optical absorption of 2D materials arising from their atomic thickness, a high-power density and large light– matter interaction area are required to ensure that the device can achieve sufficiently large modulation depths (2–17 dB) [14,15,16,17,18,19,20,21,22,23,24,25], but that limits the modulation efficiency (only 10−2–10−4 dB μm−1). This study expands the application of 2D TMDs materials with a large intrinsic bandgap in infrared optoelectronics, offering an opportunity for developing high-efficiency all-optical modulators based on 2D TMDs materials
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