Alleviating the volume expansion of silicon anodes by constructing a high-strength ordered multidimensional encapsulation structure.

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The application of silicon-based nanomaterials in fast-charging scenarios is hindered by volume expansion during lithiation and side reactions induced by surface effects. Constructing a robust encapsulation structure with high mechanical strength and conductivity is pivotal for optimizing the electrochemical performance of nanostructured silicon anodes. Herein, we propose a multifaceted hierarchical encapsulation structure featuring excellent mechanical strength and high conductivity by sequentially incorporating SiO x , hard carbon, and closed-pore carbon layers around silicon quantum dots, thereby enabling stable cycling at high current densities. In this structure, the ultra-thin SiO x layer strengthens the Si-C interface, while the outermost carbon matrix with closed pores functions both as a conductive network and a barrier against electrolyte intrusion. Notably, the synthesized material exhibits a specific capacity of 1506 mA h g-1 with 90.17% retention after 300 cycles at 1.0 A g-1. After 500 cycles at 5.0 A g-1, it retains 640.4 mA h g-1, over 70% of its initial capacity.