All region analytical modeling of 2-D transition metal dichalcogenide FET by considering effect of fringing field and region-wise mobility

Abstract

In this paper, for the first time an analytical all region model of Transition metal dichalcogenide based FET has been developed to represent the current–voltage characteristics of the device in ultra-short channel regime. Starting from Gauss’s law, Poisson’s equation is formulated and short channel subthreshold current model is developed subsequently. In order to include fringing field effect, the gaussian box is considered for top and bottom oxides along with channel. Next, Velocity saturation model is developed by considering mobile charges due to top-bottom gates and region-wise field dependent mobility in the channel utilizing the drift diffusion approach. Both the models are then unified by finding the natural points of transition from one model to other. The intraband source to drain tunneling has also been incorporated to develop generalized 2-D material based FET model. Veracity of the model has been verified with NEGF simulations for different device parameters and excellent congruence is observed. The effect of the interface trap charge density has also been included in the model and its effects on the transfer characteristics are investigated. • Analytical modeling of I-V characteristics for TMD materials applicable for all channel lengths. • Validation of model with atomistic simulator data for Sub 10 nm channel length. • Effects of double gate and fringing field have been included. • Source to drain tunneling has been included to increase model applicability for any 2D materials.