All Regimes Parasitic Capacitances Extraction Using a Multi-Channel CBCM Technique

Abstract

In this paper, we propose a multi-channel charge-based capacitance measurement (MCCBCM) technique for parasitic capacitances extraction of MOSFETs. The proposed technique is developed from a leakage- and parasitic-insensitive charge-based capacitance measurement technique, which is applied to measure gate-to-channel capacitance in certain regimes. Using the MCCBCM technique, we can measure all of the parasitic capacitance components of an MOSFET which are related to its terminals, such as the gate-to drain capacitance ( $ {C_{GD}}$ ), gate-to-source capacitance ( $ {C_{GS}}$ ), gate-to-bulk capacitance ( $ {C_{GB}}$ ), and so on. We designed a complex control methodology for the MCCBCM circuit. Specific control methods are provided for different parasitic capacitance components when MOSFETs work in different regimes. We can measure capacitances of sub-femto-farad level in all regimes, including the accumulation, depletion, and inversion regimes.