Abstract
All MOS smart temperature sensor is presented in this work using digital-intensive temperature to time converter and noise-shaped time-to-digital converter (TDC). The temperature to time converter is designed using novel delay elements, where the output of a proportional to absolute temperature (PTAT) sensor delay line having a temperature coefficient of 2037 ppm/C∘, is compared with a reference delay line having a temperature coefficient of 80 ppm/C∘. The proposed multipath delay cell is utilized in the design of a noise-shaped TDC, which achieves 8 ps raw resolution over 25 ns dynamic range(DR). Because of quantization and mismatch noise-shaping, the simulation error of the sensor is limited to ±0.71C∘ after two-point calibration, over a temperature range from 0C∘ to 100C∘. The design achieves a resolution of 0.032C∘ at a conversion rate of 5.5 MS/s in SCL 180 nm 1.8 V/3.3 V 1P4M CMOS process.
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